TK3P80E Power MOSFET (N-ch 700V《VDSS)

DataSheet
Feature
Application ScopeSwitching regulators
PolarityN-ch
Generationπ-MOSⅧ
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameDPAK
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID3A
Power DissipationPD80W
Drain-Source voltageVDSS800V
Drain-Source voltageVDSS800V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-500pF
Total gate charge (Typ.)Qg-12nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V4.9Ω
Documents
PSpicePSpice Model[Sep,2014](lib: 3KB)
Reliability InformationReliability Data[Jul,2015](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TK9P65W