TK60P03M1 Power MOSFET (N-ch single VDSS≤30V)

DataSheet
Feature
PolarityN-ch
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
Package Information
Package Image
Toshiba Package NameDPAK
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID60A
Power DissipationPD63W
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS30V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-2700pF
Total gate charge (Typ.)Qg-40nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0078Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0064Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TK9P65W