TPC6009-H Power MOSFET (N-ch single 30V《VDSS≤60V)

DataSheet
Feature
Application ScopeMobile equipments
PolarityN-ch
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameVS-6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID5.3A
Power DissipationPD2.2W
Drain-Source voltageVDSS40V
Drain-Source voltageVDSS40V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-225pF
Total gate charge (Typ.)Qg-4.7nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.098Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.081Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC6009-H,LF(CMMalaysia3000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC6902