TPC8045-H Power MOSFET (N-ch single 30V《VDSS≤60V)

DataSheet
Feature
PolarityN-ch
GenerationU-MOSⅥ-H
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameSOP-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID18A
Power DissipationPD1.9W
Drain-Source voltageVDSS40V
Drain-Source voltageVDSS40V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-5800pF
Total gate charge (Typ.)Qg-90nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0044Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.0039Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC8045-H(TE12L,VMMalaysia3000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC8407