TPC8407 Power MOSFET (N-ch + P-ch complementary

DataSheet
Feature
Application ScopeCCFL inverters / Mobile equipments / Motor drivers
PolarityN-ch + P-ch
GenerationU-MOSⅦ-H/U-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Package Image
Toshiba Package NameSOP-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID9A
Drain currentID-7.4A
Drain current (Q1)ID9A
Drain current (Q2)ID-7.4A
Power DissipationPD1.5W
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS30V
Drain-Source voltage (Q1)VDSS30V
Drain-Source voltage (Q2)VDSS-30V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Q1) (Typ.)Ciss-1190pF
Input capacitance (Q2) (Typ.)Ciss-1650pF
Total gate charge (Q2) (Typ.)Qg-39nC
Total gate charge (Q1) (Typ.)Qg-17nC
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4.5V0.021Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.017Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-10V0.023Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=-4.5V0.029Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC8407,LQ(SChina2500yes
Documents
Reliability InformationReliability Data[Feb,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPC8407