TPCA8121 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeLithium-Ion secondary batteries / Power management switches
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Malaysia
Package Information
Toshiba Package NameSOP Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-45A
Power DissipationPD2.8W
Drain-Source voltageVDSS-30V
Drain-Source voltageVDSS-30V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-7420pF
Total gate charge (Typ.)Qg-190nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.003Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.004Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCA8121,L1Q(CMMalaysia5000yes
Documents
PSpicePSpice Model[Feb,2016](lib: 3KB)
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)