TPCC8137 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopePower management switches
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameTSON Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-13A
Power DissipationPD30W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-43nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.010Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.016Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2V0.030Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.052Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCC8137,L1Q(MMalaysia5000yes
Documents
PSpicePSpice Model[Jan,2016](lib: 3KB)
Reliability InformationReliability Data[Sep,2014](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCC8070