TPCF8101 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeMobile equipments / Notebook PCs
PolarityP-ch
GenerationU-MOSⅢ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-6A
Power DissipationPD2.5W
Drain-Source voltageVDSS-12V
Drain-Source voltageVDSS-12V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-18nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.028Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.04Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.085Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003