TPCF8105 Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeLithium-Ion secondary batteries / Power management switches
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameVS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-6A
Power DissipationPD2.5W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-1100pF
Total gate charge (Typ.)Qg-17nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.03Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.041Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=1.8V0.1Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCF8105,LF(CMMalaysia4000yes
Documents
Reliability InformationReliability Data[Feb,2015](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCF8003