TPCP8901 Power transistor for high-speed switching applications

DataSheet
Feature
Application ScopeMOS gate drivers
PolarityPNP + NPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan / Malaysia
Package Information
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector Current (Q1)IC-0.8A
Collector Current (Q2)IC1A
Collector Current (Q1)ICP-5A
Collector Current (Q2)ICP5A
Collector power dissipation (Q1/Q2)PC0.83W
Collector-Base Voltage (Q1)VCBO-50V
Collector-Base Voltage (Q2)VCBO100V
Collector-emitter voltage (Q1)VCEO-50V
Collector-emitter voltage (Q2)VCEO50V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Q1) (Max)hFE-500-
DC Current Gain hFE (Q1) (Min)hFE-200-
DC Current Gain hFE (Q2) (Max)hFE-1000-
DC Current Gain hFE (Q2) (Min)hFE-400-
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)--0.21V
Collector Emitter Saturation Voltage (Q2) (Max)VCE(sat)-0.17V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCP8901(TE85L,F)Japan3000yes
Documents
Reliability InformationReliability Data[Dec,2013](PDF: 161KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)