TPCP8H02 Power transistor for high-speed switching applications

DataSheet
Feature
Application ScopeCamera flashes / DC/DC converters / High-speed switching
PolarityNPN + SMOS
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector Current (Q1)IC3A
Collector Current (Q1)ICP5A
Collector power dissipation (Q1/Q2)PC2W
Collector-emitter voltage (Q1)VCEO30V
Drain-Source voltage (Q2)VDSS20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Q1) (Max)hFE-400-
DC Current Gain hFE (Q1) (Min)hFE-250-
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=1.5V15Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=2.5V4Ω
Drain-Source on-resistance (Q2) (Max)RDS(ON)VGS=4V3Ω
Collector Emitter Saturation Voltage (Q1) (Max)VCE(sat)-0.16V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPCP8H02(TE85L,F)Japan3000yes
Documents
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)