TPCP8R01 Multi-chip discrete device (N-ch + ZNR)

Feature
Internal ConnectionIndependent
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePS-8
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain current (Q1)ID2A
Drain-Source voltage (Q1)VDSS60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Q2 Reverse Current (Max)IRVR=33V0.0005mA
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=4V0.44Ω
Drain-Source on-resistance (Q1) (Max)RDS(ON)VGS=10V0.30Ω
Q2 Zener Voltage (Typ.)VZIZ=2mA43V
Documents
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogGeneral-Purpose Small Signal Surface-Mount Devices Product Guide[May,2011](PDF: 2608KB)