TPCT4204 Power MOSFET (N-ch dual)

DataSheet
Feature
Application ScopeMobile equipments
PolarityN-ch×2
GenerationU-MOSⅣ
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NameSTP2
Pins4
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Source CurrentIS6A
Power DissipationPD1.47W
Source-Source voltageVSSS30V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Total gate charge (Typ.)Qg-12nC
Source-Source on-resistance (Max)RSS(ON)VGS=2.5V0.052Ω
Source-Source on-resistance (Max)RSS(ON)VGS=4V0.039Ω
Source-Source on-resistance (Max)RSS(ON)VGS=4.5V0.038Ω
Documents
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)