TPN1110ENH Power MOSFET (N-ch 150V《VDSS≤250V)

DataSheet
Feature
Application ScopeHigh efficiency DC/DC converters / Switching regulators
PolarityN-ch
GenerationU-MOSⅧ-H
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameTSON Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID13A
Power DissipationPD39W
Drain-Source voltageVDSS200V
Drain-Source voltageVDSS200V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-460pF
Total gate charge (Typ.)Qg-7.0nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V0.114Ω
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPN1110ENH,L1Q(MMalaysia5000yes
Documents
PSpicePSpice Model[May,2015](lib: 3KB)
Reliability InformationReliability Data[Nov,2013](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCC8070