TPN4R712MD Power MOSFET (P-ch single)

DataSheet
Feature
Application ScopeLithium-Ion secondary batteries / Notebook PCs
PolarityP-ch
GenerationU-MOSⅥ
RoHS Compatible Product(s) (#)Available
Assembly basesMalaysia
Package Information
Package Image
Toshiba Package NameTSON Advance
Pins8
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID-36A
Power DissipationPD42W
Drain-Source voltageVDSS-20V
Drain-Source voltageVDSS-20V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Input capacitance (Typ.)Ciss-4300pF
Total gate charge (Typ.)Qg-65nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=4.5V0.0047Ω
Drain-Source on-resistance (Max)RDS(ON)|VGS|=2.5V0.0081Ω
Documents
PSpicePSpice Model[Apr,2015](lib: 3KB)
Reliability InformationReliability Data[Aug,2015](PDF: 161KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
Application NoteConstruction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
Application NoteMaximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
Application NoteElectrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
Application NoteApplication Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
Application NoteHeat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)
TPCC8070