TRS4E65F SiC Schottky barrier diode

DataSheet
Feature
Application ScopePower factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters
FeatureChip design of 2nd generation.
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Toshiba Package NameTO-220-2L
Pins2
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Forward DC currentIF(DC)4A
Repetitive Peak Reverse VoltageVRRM650V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Repetitive peak reverse current (Max)IRRMVRRM=650V20microA
Peak Forward Voltage (Max)VFMIF=4000mA1.60V
TRS8E65C