TTB002 Power transistor for low frequency applications

DataSheet
Feature
Application ScopeLow frequency power amplifier
PolarityPNP
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Toshiba Package NamePW-Mold
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-3A
Collector CurrentICP-6A
Collector power dissipationPC30W
Collector-Base VoltageVCBO-60V
Collector-emitter voltageVCEO-60V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Max)hFE-250-
DC Current Gain hFE (Min)hFE-100-
Collector Emitter Saturation Voltage (Max)VCE(sat)--1.7V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTB002(TE16L1,NQ)Japan2000yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 159KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)