TTB1067B Power transistor for high-speed switching applications

DataSheet
Feature
FeatureHigh hFE / Low saturation voltage
Application ScopePower amplifier / Switching
PolarityPNP
Complementary ProductTTD1509B
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Toshiba Package NameTO-126N
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-2A
Collector CurrentICP-3A
Collector power dissipationPC10W
Collector-Base VoltageVCBO-80V
Collector-emitter voltageVCEO-80V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Transition frequency (Typ.)fT-50MHz
DC Current Gain hFE (Min)hFE-2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)--1.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTB1067B,Q(SChina250yes
Documents
Reliability InformationReliability Data[Jun,2016](PDF: 86KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)