TTC013 Power transistor for high-speed switching applications

DataSheet
Feature
FeatureHigh hFE
Application ScopeHigh voltage switching
PolarityNPN
RoHS Compatible Product(s) (#)Available
Assembly basesJapan
Package Information
Package Image
Toshiba Package NamePW-Mini
JEITASC-62
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.5A
Collector CurrentICP1A
Collector power dissipationPC2.5W
Collector-Base VoltageVCBO600V
Collector-emitter voltageVCEO350V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
DC Current Gain hFE (Max)hFEIC=0.05A
VCE=5V
200-
DC Current Gain hFE (Min)hFEIC=0.05A
VCE=5V
100-
Collector Emitter Saturation Voltage (Max)VCE(sat)IB=20mA
IC=0.16A
0.3V
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 160KB)
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TA79L09F