TTD1509B Power transistor for high-speed switching applications

DataSheet
Feature
FeatureHigh hFE / Low saturation voltage
Application ScopePower amplifier / Switching
PolarityNPN
Complementary ProductTTB1067B
RoHS Compatible Product(s) (#)Available
Assembly basesChina
Package Information
Toshiba Package NameTO-126N
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC2A
Collector CurrentICP3A
Collector power dissipationPC10W
Collector-Base VoltageVCBO80V
Collector-emitter voltageVCEO80V
Electrical Characteristics
CharacteristicsSymbolConditionValueUnit
Transition frequency (Typ.)fT-100MHz
DC Current Gain hFE (Min)hFE-2000-
Collector Emitter Saturation Voltage (Max)VCE(sat)-1.5V
Order Information
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TTD1509B,Q(SChina250yes
Documents
Reliability InformationReliability Data[Mar,2016](PDF: 86KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)