VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Application Notes
- Application Note - Design Guidelines for Schottky Rectifiers
- Application Note - Fundamentals of Rectifiers
- Application Note - High Speed Data Line Protection - Low Current Bridges Rectifiers Lend Themselves to Data Line Protection
- Application Note - Physical Explanation
- Application Note - Power Factor Correction with Ultrafast Diodes
- Application Note - Rectifiers for Power-Factor-Correction (PFC)
- Application Note - SUPERRECTIFIER Design Brings New Level of Reliability to Surface Mount Components
- Application Note - Using Rectifiers in Voltage Multiplier Circuits
Markings
- Diodes Group Body Marking - Marking
Packaging Information
- Packaging Information - Packaging Information
- Application Note 88755
- Application Note 88755
- Application Note 88755
- Application Note 88755
- Application Note 88755
- Application Note 88755
- Application Note 88755
- Diodes Group Body Marking 89174
- Packaging Information 30205
- VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V a 89131
