V30100C, VI30100C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A

Features
  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
Datasheet
Markings
V30100C-E3, VF30100C-E3, VI30100C-E3 89010
Diodes Group Body Marking 89174
V30100C, VI30100C Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A 89158