VF20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Markings
- Diodes Group Body Marking - Marking
- VF20120C 89324
