VFT1045CBP Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A _ BDTIC a Leading Distributor in China

VFT1045CBP Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A

VFT1045CBP

Features

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

VFT1045CBP

Markings

Diodes Group Body Marking - Marking

VFT1045CBP 89367

Diodes Group Body Marking 89174

VFT1045CBP 89367

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