VFT4060C-E3 Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

Features
  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
Datasheet
Markings
VFT4060C-E3 89379
Diodes Group Body Marking 89174
VFT4060C-E3 Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A 89379