技术特性

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm

数据手册DataSheet 下载

• IRLI540G, SiHLI540G

Application Notes

• Application Note AN1005 - Power MOSFET Avalanche Design Guidelines
• Application Note AN949 - Current Rating of Power Semiconductors

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRLI540G_RC, SiHLI540G_RC - R-C Thermal Model Parameters

IRLI540G, SiHLI540G 90399

Device Application Note AN1005 91051

Device Application Note AN949 91214

General Information 91155

IRLI540G_RC, SiHLI540G_RC 90399

IRLI540G, SiHLI540G Power MOSFET 90399