IRFI640G, SiHFI640G Power MOSFET
Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
- Device Application Note AN949 - Current Rating of Power Semiconductors
General Information
- General Information - Useful Web Links
RC Thermal Models
- IRFI640G_RC, SiHFI640G_RC - R-C Thermal Model Parameters
Reliability Data
- Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
- Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result
- IRFI640G, SiHFI640G 91150
- Device Application Note AN949 91214
- General Information 91155
- IRFI640G_RC, SiHFI640G_RC 91150
- Package Reliability 91155
- Silicon Technology Reliability 63402
- IRFI640G, SiHFI640G Power MOSFET 91150
