IRFIBC30G, SiHFIBC30G Power MOSFET

Features
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
PSpice Models (*.lib)
PSpice Models (*.olb)
IRFIBC30G, SiHFIBC30G 91180
Device Application Note AN1005 91051
General Information 91155
IRFIBC30G_RC, SiHFIBC30G_RC 91180
Package Reliability 91155
Silicon Technology Reliability 63402
IRFIBC30G-P LIB, SiHFIBC30G-P LIB 91180
IRFIBC30G-P OLB, SiHFIBC30G-P OLB 91180
IRFIBC30G, SiHFIBC30G Power MOSFET 91180