1PS79SB17 4 V, 30 mA low C_d Schottky barrier diode

Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package

产品特点 Features
  • Very low diode capacitance
  • Very low forward voltage
  • Very small SMD plastic packages
应用
  • Digital applications:
    • Ultra high-speed switching
    • Clamping circuits.
  • RF applications:
    • Diode ring mixer
    • RF detector
    • RF voltage doubler
产品实物图
1PS79SB17 产品实物图
封装
型号 可订购的器件编号 订购码 (12NC) 产品状态 封装
1PS79SB17 1PS79SB17,115 9340 580 74115 量产 SOD523
外形图
封装版本 封装名称 封装说明
SOD523 SOD523 plastic surface-mounted package; 2 leads
订货和供应
型号 订购码 (12NC) 可订购的器件编号 化学成分
1PS79SB17 1PS79SB17,115 9340 580 74115 1PS79SB17
1PS79SB17 技术支持
档案名称 标题 类型 格式
1PS79SB17 4 V, 30 mA low C_d Schottky barrier diode Data sheet pdf
AN10808 Thermal consideration of NXP FlatPower MEGA Schottky barrier rectifiers - Selection criteria Application note pdf
AN10117 Medium Power Transistors and Rectifiers for Power Management Applications Application note pdf
75016734 Downsize the footprint, boost the performance; NXP ultra-small diodes and transistors for portable applications Leaflet pdf
75017347 Enabling the Mobile Experience Brochure pdf
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