BF1118W：硅RF开关

这些开关是耗尽型场效应晶体管(FET)和波段切换二极管的组合。BF1118、BF1118R、BF1118W和BF1118WR分别采用SOT143B、SOT143R、SOT343N和SOT343R封装。这些器件具有低损耗和高隔离能力，提供极佳的RF切换功能。MOSFET的栅极可通过二极管与接地隔离，从而实现低损耗。在栅极和源极之间以及栅极和漏极之间集成二极管，防止过大的输入电压浪涌。

特性和优势
    • 专为最高1 GHz的低损耗RF切换设计
应用
    • VCR调谐器无源环通
    • 收发器切换
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VSGsource-gate voltage7V
VDSdrain-source voltage3V
IDdrain current10mA
VGS(p)gate-source cut-off voltageVDS = 1 V; ID = 20 µA-2-2.44V
RDS(on)drain-source on-state resistanceVGS = 0 V; ID = 1 mA1523.3Ω
Linsinsertion lossf ≤ 1 GHz; RL = 50 Ω; Rsource = 50 Ω; VSK = VDK = 0 V; IF = 0 mA [0]2.5dB
Lisoisolationf ≤ 1 GHz; RL = 50 Ω; Rsource = 50 Ω; VSK = VDK = 3.3 V; IF = 1 mA30dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BF1118W
SO4
(SOT343N)		sot343n_posot343n_fr
sot343n_fw		Reel 7" Q1/T1量产VB%BF1118W,115( 9340 645 48115 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1G, AFET gate; diode anode
2Kdiode cathode
3Ssource
4Ddrain
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BF1118WBF1118W,115Always Pb-free11
文档资料
档案名称标题类型格式日期
BF1118_1118R_1118W_1118WR (中文)Silicon RF switchesData sheetpdf2014-11-14
SOT343N_115SO4; Tape reel SMD; standard product orientation 12NC ending 115Packingpdf2012-11-16
sot343n_fwFootprint for wave soldering SOT343NWave solderingpdf2009-11-16
sot343n_poplastic surface-mounted package; 4 leadsOutline drawingpdf2009-10-08
sot343n_frFootprint for reflow soldering SOT343NReflow solderingpdf2009-11-16
订购信息
型号订购码 (12NC)可订购的器件编号
BF1118W9340 645 48115BF1118W,115
Silicon RF switches BF1118WR
Silicon RF switches BF1118WR
Silicon RF switches BF1118WR
Silicon RF switches BF1118WR
SO4; Tape reel SMD; standard product orientation 12NC ending 115 bfg520w
Footprint for wave soldering SOT343N BF1118W
plastic surface-mounted package; 4 leads BF1118W
Footprint for reflow soldering SOT343N BF1118W
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