BF908R:N沟道双栅极MOSFET

耗尽型场效应晶体管,采用塑料SOT143R封装。

特性和优势
    • 高正向转移导纳
    • 高正向转移导纳输入电容比
    • 栅极和源极之间的集成式反向二极管
应用
    • 高达1 GHz的低噪声增益控制放大器
    • 专业通信设备
    • 电视调谐器
    • 采用12 V电源电压的VHF和UHF应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltage12V
IDdrain current40mA
VGS(th)gate-source threshold voltageVDS = 8 V; ID = 20 µA; gate1-2V
IDSdrain-source currentVDS = 8 V; VG1-S = 0 V; VG2-S = 4 V31527mA
Cissinput capacitancef = 1 MHz; VDS = 8 V; VGS = 4 V; Tj = 25 °C; gate13.14pF
Cossoutput capacitancef = 1 MHz; VDS = 8 V; VGS = 4 V; Tj = 25 °C1.72.2pF
|Yfs|forward transfer admittanceVDS = 8 V; VG2-S = 4 V364350mS
NFnoise figuref = 800 MHz1.52.5dB
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BF908R

(SOT143R)
sot143r_posot143r_fr
sot143r_fw
Reel 11" Q3/T4, LargePack量产%M2BF908R,235( 9340 226 10235 )
Reel 7" Q3/T4量产%M2BF908R,215( 9340 226 10215 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1S, Bsource
2Ddrain
3G2gate 2
4G1gate 1
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BF908RBF908R,235week 47, 2002NANA
BF908RBF908R,215week 47, 2002NANA
文档资料
档案名称标题类型格式日期
BF908-R_N (中文)Dual-gate MOS-FETsData sheetpdf2007-11-29
SOT143R_235Tape reel SMD; standard product orientation 12NC ending 235Packingpdf2012-11-07
SOT143R_215Tape reel SMD; standard product orientation 12NC ending 215Packingpdf2012-11-07
sot143r_poplastic surface-mounted package; reverse pinning; 4 leadsOutline drawingpdf2009-10-08
sot143r_fwFootprint for wave soldering SOT143RWave solderingpdf2009-10-08
sot143r_frFootprint for reflow soldering SOT143RReflow solderingpdf2009-10-08
订购信息
型号订购码 (12NC)可订购的器件编号
BF908R9340 226 10235BF908R,235
BF908R9340 226 10215BF908R,215
Dual-gate MOS-FETs BF908R
Dual-gate MOS-FETs BF908R
Tape reel SMD; standard product orientation 12NC ending 235 bfu550xr
Tape reel SMD; standard product orientation 12NC ending 215 bfu550xr
plastic surface-mounted package; reverse pinning; 4 leads BF908R
Footprint for wave soldering SOT143R BF908R
Footprint for reflow soldering SOT143R BF908R