The BGU8H1 is a Low Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external matching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 13 dB gain at a noise figure of 0.9 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
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SiGe:C Low Noise Amplifier MMIC for LTE (REV 2.0) PDF (127.0 kB) BGU8H1 [English] | 28 Apr 2016 |
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BGU8H1 LTE LNA evaluation board (REV 3.0) PDF (1.1 MB) AN11514 [English] | 27 Jan 2016 |
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XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (REV 1.0) PDF (185.0 kB) SOT1232 [English] | 08 Feb 2016 |
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Solderlayout SOT1232 (REV 1.0) PDF (32.0 kB) SOLDERLAYOU_SOT1232 [English] | 16 May 2014 |
型号 | 状态 | Package version | @VCC [min] (V) | @VCC [max] (V) | @ICC [typ] (mA) | Gp [typ] (dB) | NF [typ] (dB) | Pi(1dB) [min] (dBm) | IP3i [min] (dBm) | IP3i [typ] (dBm) | @VCC (V) | Pi(1dB) [typ] (dBm) | @f (MHz) |
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BGU8H1 | Active | SOT1232 | 1.5 | 3.1 | 13 | 0.9 | -3 | 2350 |
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | MSL | MSL LF |
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BGU8H1 | SOT1232 | Solderlayou_SOT1232 | Reel 7" Q1/T1 | Active | BGU8H1X (9340 685 34115) | F | BGU8H1 | Always Pb-free | 1 | 1 |