135 W LDMOS功率晶体管,适合700 MHz至1000 MHz频率的工业应用。
特性和优势
应用
| 产品图片![]() |
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 700 | 1000 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 135 | W | |||
Gp | power gain | PL(AV) = 26.5 W; VDS = 28 V | 20 | 21 | dB | |
RLin | input return loss | PL(AV) = 26.5 W; VDS = 28 V; IDq = 950 mA | -10 | -6.5 | dB | |
ηD | drain efficiency | PL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA | 26 | 28 | % | |
ACPR | adjacent channel power ratio | PL(AV) = 26.5 W; VDS = 28 V; 869 MHz < f < 894 MHz; IDq = 950 mA | -39 | -36.5 | dBc |
型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
---|---|---|---|---|---|---|---|
BLF10M6LS135 | ![]() (SOT502B) | sot502b_po | Bulk Pack | 量产 | Standard Marking | BLF10M6LS135U( 9340 679 92112 ) |
Pin | Symbol | Description | 外形简图 | 图形符号 |
---|---|---|---|---|
1 | D | drain | ![]() | ![]() |
2 | G | gate | ||
3 | S | souce |
型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
---|---|---|---|---|---|
BLF10M6LS135 | BLF10M6LS135U | ![]() ![]() | Always Pb-free | NA |
档案名称 | 标题 | 类型 | 格式 | 日期 |
---|---|---|---|---|
BLF10M6135_BLF10M6LS135 (中文) | Power LDMOS transistor | Data sheet | 2014-06-24 | |
AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
sot502b_po | earless flanged ceramic package; 2 leads | Outline drawing | 2007-05-08 | |
SOT502B_112 | CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
型号 | 订购码 (12NC) | 可订购的器件编号 |
---|---|---|
BLF10M6LS135 | 9340 679 92112 | BLF10M6LS135U |