BLF10M6LS160：功率LDMOS晶体管
160 W LDMOS功率晶体管，适合700 MHz至1000 MHz频率的工业应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 700 | 1000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 160 | W | |||
| Gp | power gain | PL(AV) = 32 W; VDS = 32 V | 21 | 22.5 | dB | |
| RLin | input return loss | PL(AV) = 32 W; VDS = 32 V; IDq = 1200 mA | -8 | -5.5 | dB | |
| ηD | drain efficiency | PL(AV) = 32 W; VDS = 32 V; 920 MHz < f < 960 MHz; IDq = 1200 mA | 25 | 27 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 32 W; VDS = 32 V; 920 MHz < f < 960 MHz; IDq = 1200 mA | -41 | -38 | dBc |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF10M6LS160 |  (SOT502B) | sot502b_po | Bulk Pack | 量产 | Standard Marking | BLF10M6LS160U( 9340 679 94112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D | drain |  |  |
| 2 | G | gate | ||
| 3 | S | souce |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF10M6LS160 | BLF10M6LS160U |   | Always Pb-free | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF10M6160_BLF10M6LS160 (中文) | Power LDMOS transistor | Data sheet | 2014-06-24 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot502b_po | earless flanged ceramic package; 2 leads | Outline drawing | 2007-05-08 | |
| SOT502B_112 | CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF10M6LS160 | 9340 679 94112 | BLF10M6LS160U |
- Power LDMOS transistor BLF10M6_LS_160
- Power LDMOS transistor BLF10M6_LS_160
- Power LDMOS transistor BLF10M6_LS_160
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- earless flanged ceramic package; 2 leads BLS7G3135LS-200
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
