BLF178P：功率LDMOS晶体管
1200 W LDMOS功率晶体管，用于HF至110 MHz频段的广播应用和工业应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 128 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1200 | W | |||
| Gp | power gain | VDS = 50 V; PL = 1200 W | 27 | 28.5 | 31 | dB |
| RLin | input return loss | VDS = 50 V; IDq = 40 mA; PL = 1200 W | -16 | -12 | dB | |
| ηD | drain efficiency | VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1200 W | 71 | 75 | % | |
| PL | output power | 1200 | W |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF178P |  (SOT539A) | sot539a_po | Bulk Pack | 量产 | Standard Marking | BLF178P,112( 9340 656 54112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF178P | BLF178P,112 |   | Always Pb-free | 1 | 1 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF178P (中文) | Power LDMOS transistor | Data sheet | 2012-02-16 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLF178P_Data-sheet | PCB Design BLF178P (Data sheet) | Design support | zip | 2012-02-24 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot539a_po | flanged balanced ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 | |
| SOT539A_112 | CDFM4; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF178P | 9340 656 54112 | BLF178P,112 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF178P (Data sheet) | Design support | 2012-02-24 |
- Power LDMOS transistor BLF178P
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
- CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
- PCB Design BLF178P (Data sheet) BLF178P
