A 200 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
特性和优势
应用
| 产品图片 |
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 10 | 600 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 200 | W | |||
Gp | power gain | PL = 200 W; VDS = 50 V [0] | 28 | dB | ||
RLin | input return loss | PL = 200 W [0] | -10 | dB | ||
ηD | drain efficiency | PL = 200 W [0] | 75 | % |
型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
---|---|---|---|---|---|---|---|
BLF182XRS | CDFM4 (SOT1121B) | sot1121b_po | Bulk Pack | 开发中 | Standard Marking | BLF182XRSU( 9340 692 26112 ) |
Pin | Symbol | Description | 外形简图 | 图形符号 |
---|---|---|---|---|
1 | D1 | drain1 | ||
2 | D2 | drain2 | ||
3 | G1 | gate1 | ||
4 | G2 | gate2 | ||
5 | S | source |
型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
---|---|---|---|---|---|
BLF182XRS | BLF182XRSU | Always Pb-free | NA | NA |
档案名称 | 标题 | 类型 | 格式 | 日期 |
---|---|---|---|---|
BLF182XR_BLF182XRS (中文) | Power LDMOS transistor | Data sheet | 2015-07-23 | |
AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
75017489 | NXP’s eXtremely Rugged family: unsurpassed future-proof performance | Leaflet | 2013-11-14 | |
fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
sot1121b_po | earless flanged ceramic package; 4 leads | Outline drawing | 2012-06-08 |
型号 | 订购码 (12NC) | 可订购的器件编号 |
---|---|---|
BLF182XRS | 9340 692 26112 | BLF182XRSU |