BLF2324M8LS200P:LDMOS功率晶体管

200 W LDMOS功率晶体管,适合于2300 MHz至2400 MHz频率范围内的工业应用。

特性和优势
    • 极佳的抗失配性
    • 高效
    • 低热阻,提供极佳的热稳定性
    • 为宽带应用设计(2300 MHz至2400 MHz)
    • 更低的输出电容提升了Doherty应用的性能
    • 专为低内存占用量设计,提供极佳的预失真性能
    • 内部匹配,便于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于2300 MHz至2400 MHz频率范围内的工业和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range23002400MHz
PL(1dB)nominal output power at 1 dB gain compression200W
Gppower gainPL(AV) = 60 W; VDS = 28 V15.817.2dB
RLininput return lossPL(AV) = 60 W; VDS = 28 V; IDq = 1740 mA-11-8dB
ηDdrain efficiencyPL(AV) = 60 W; VDS = 28 V; 2300 MHz < f < 2400 MHz; IDq = 1740 mA2732%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 60 W; VDS = 28 V; 2300 MHz < f < 2400 MHz; IDq = 1740 mA-37-34dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF2324M8LS200P

(SOT539B)
sot539b_poReel 13" Q1/T1量产Standard MarkingBLF2324M8LS200PJ( 9340 685 79118 )
Bulk Pack量产Standard MarkingBLF2324M8LS200PU( 9340 685 79112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1D1drain1
2D2drsin2
3G1gate1
4G2gate2
5Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF2324M8LS200PBLF2324M8LS200PJAlways Pb-freeNANA
BLF2324M8LS200PBLF2324M8LS200PUAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF2324M8LS200P (中文)Power LDMOS transistorData sheetpdf2014-06-03
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF2324M8LS200P_Data-sheetPCB Design BLF2324M8LS200P (Data sheet)Design supportzip2014-06-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
订购信息
型号订购码 (12NC)可订购的器件编号
BLF2324M8LS200P9340 685 79118BLF2324M8LS200PJ
BLF2324M8LS200P9340 685 79112BLF2324M8LS200PU
其它
标题类型日期
PCB Design BLF2324M8LS200P (Data sheet)Design support2014-06-05
Power LDMOS transistor BLF2324M8LS200P
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
PCB Design BLF2324M8LS200P (Data sheet) BLF2324M8LS200P