数据手册DataSheet 下载：BLF2425M7L250P 功率LDMOS晶体管.pdf
250 W LDMOS功率晶体管，适合2400 MHz至2500 MHz频率的工业、科学和医疗(ISM)应用。
BLF2425M7L250P和BLF2425M7LS250P设计用于高功率CW应用，组装在高性能陶瓷封装中，提供有耳和无耳版本。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF2425M7L250P | (SOT539A) | sot539a_po | Blister pack | 激活 | Standard Marking | BLF2425M7L250P,112( 9340 659 78112 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF2425M7L250P | BLF2425M7L250P,112 |   | Always Pb-free | NA | NA | |||
| BLF2425M7L250P | BLF2425M7L250P,118 | | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF2425M7L250P_2425M7LS250P (中文)：Power LDMOS transistor | Data sheet | 2013-07-12 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| PCB_Design_BLF2425M7L250P_2425M7LS250P_Data-sheet：PCB Design BLF2425M7L(S)250P (Data sheet) | Design support | zip | 2013-02-21 |
| 75017344：RF power as a robust and highly efficient energy source | Leaflet | 2012-09-29 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| NXP_RFpower_Lib_V08p0：RF Power Model Library for MicroWave Office | Simulation model | zip | 2012-06-08 |
| NXP_RFpower_Library_Manual_MWO_20120420：RF Power Model Library Manual and Installation Instructions for MicroWave Office | Simulation model | 2012-05-22 | |
| NXP_RFPower_Simulation_Example：RF Power Simulation Example for MicroWave Office | Simulation model | zip | 2012-06-11 |
| BLF2425M7L250P_ADS-2009_Model：BLF2425M7L250P ADS-2009 Model | Simulation model | zip | 2013-06-20 |
| BLF2425M7LS250P_ADS-2012_Model：BLF2425M7LS250P ADS-2012 Model | Simulation model | zip | 2014-04-29 |
| SOT539A_135：CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 | Packing | 2012-12-03 | |
| SOT539A_112：CDFM4; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 | |
| sot539a_po：flanged balanced ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 |
- Power LDMOS transistor BLF2425M7L_S_250P
- Power LDMOS transistor BLF2425M7L_S_250P
- Power LDMOS transistor BLF2425M7L_S_250P
- Mounting and Soldering of RF transistors aerospace_defense
- PCB Design BLF2425M7L(S)250P (Data sheet) BLF2425M7L_S_250P
- RF power as a robust and highly efficient energy source rf_energy_ism
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- RF Power Model Library for MicroWave Office CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for MicroWave Office CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF2425M7L250P ADS-2009 Model BLF2425M7L_S_250P
- BLF2425M7LS250P ADS-2012 Model BLF2425M7L_S_250P
- CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
- CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
- flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
