BLF578：功率LDMOS晶体管
1200 W LDMOS功率晶体管，用于HF至500 MHz波段的广播应用和工业应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 1200 | W | |||
| Gp | power gain | VDS = 50 V; PL = 1200 W | 26 | dB | ||
| ηD | drain efficiency | VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1200 W | 75 | % | ||
| PL | output power | 1200 | W |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF578 |  (SOT539A) | sot539a_po | Bulk Pack | 量产 | Standard Marking | BLF578,112( 9340 631 55112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | souce |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF578 | BLF578,112 |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF578 (中文) | Power LDMOS transistor | Data sheet | 2011-02-17 | |
| AN10800 | Using the BLF578 in the 88 MHz to 108 MHz FM band | Application note | 2009-10-13 | |
| AN10858 | 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 | Application note | 2010-03-26 | |
| AN10882 | Dependency of BLF578 gate bias voltage on temperature | Application note | 2009-12-18 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| AN10967 | BLF578 demo for 352 MHz 1kW CW power | Application note | 2012-11-20 | |
| PCB_Design_BLF578_AN10800 | PCB Design BLF578 (AN10800) | Design support | zip | 2012-02-24 |
| PCB_Design_BLF578_AN10967 | PCB Design BLF578 (AN10967) | Design support | zip | 2012-02-24 |
| PCB_Design_BLF578_AN10858 | PCB Design BLF578 (AN10858) | Design support | zip | 2012-02-24 |
| PCB_Design_BLF578_Data-sheet | PCB Design BLF578 (Data sheet) | Design support | zip | 2012-02-24 |
| 75017020 | LDMOS RF power transistor delivering 1000 W of CW output power | Leaflet | 2011-05-27 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| high_voltage_rf_ldmos_technology_for_broadcast_applications | High Voltage RF LDMOS Technology for Broadcast Applications | Other type | 2009-01-13 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| RFPower_Longevity_Overview | RF Power Longevity Overview | Other type | 2014-09-09 | |
| Application_Measurement_Report_BLF578_405-465MHz_NA-1119 | Application Measurement Report BLF578 405-465 MHz NA-1119 | Report | 2015-06-23 | |
| Application_Measurement_Report_BLF578_500MHz_NA-1649 | Application Measurement Report BLF578 500 MHz NA-1649 | Report | 2015-06-23 | |
| BLF578_ADS-2009_Model | BLF578 ADS-2009 Model | Simulation model | zip | 2013-04-02 |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| BLF578_ADS-2011_Model | BLF578 ADS-2011 Model | Simulation model | zip | 2013-06-20 |
| sot539a_po | flanged balanced ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 | |
| SOT539A_112 | CDFM4; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF578 | 9340 631 55112 | BLF578,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF578 ADS-2009 Model | Simulation model | 2013-04-02 |
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
| BLF578 ADS-2011 Model | Simulation model | 2013-06-20 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF578 (AN10800) | Design support | 2012-02-24 |
| PCB Design BLF578 (AN10967) | Design support | 2012-02-24 |
| PCB Design BLF578 (AN10858) | Design support | 2012-02-24 |
| PCB Design BLF578 (Data sheet) | Design support | 2012-02-24 |
- Power LDMOS transistor BLF578
- Using the BLF578 in the 88 MHz to 108 MHz FM band BLF578
- 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 BLF578
- Dependency of BLF578 gate bias voltage on temperature BLF578
- Mounting and Soldering of RF transistors aerospace_defense
- BLF578 demo for 352 MHz 1kW CW power BLF578
- LDMOS RF power transistor delivering 1000 W of CW output power BLF578
- Fatigue in aluminum bond wires gan_devices
- High Voltage RF LDMOS Technology for Broadcast Applications BLF871_S
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- RF Power Longevity Overview gan_devices
- Application Measurement Report BLF578 405-465 MHz NA-1119 BLF578
- Application Measurement Report BLF578 500 MHz NA-1649 BLF578
- flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
- CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
- BLF578 ADS-2009 Model BLF578
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF578 ADS-2011 Model BLF578
- PCB Design BLF578 (AN10800) BLF578
- PCB Design BLF578 (AN10967) BLF578
- PCB Design BLF578 (AN10858) BLF578
- PCB Design BLF578 (Data sheet) BLF578
