10 W LDMOS功率晶体管,用于HF至2200 MHz波率范围的应用。
特性和优势
应用
| 产品图片 |
Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|
frange | frequency range | 10 | 2200 | MHz | ||
PL(1dB) | nominal output power at 1 dB gain compression | 10 | W | |||
Gp | power gain | PL(AV) = 2 W; VDS = 28 V | 17.3 | 19.3 | dB | |
ηD | drain efficiency | PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA | 29 | 31 | % | |
ACPR | adjacent channel power ratio | PL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA | -39 | -36 | dBc |
型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
---|---|---|---|---|---|---|---|
BLF640 | CDIP2 (SOT538A) | sot538a_po | Bulk Pack | 量产 | Standard Marking | BLF640U( 9340 674 71112 ) |
Pin | Symbol | Description | 外形简图 | 图形符号 |
---|---|---|---|---|
1 | D | drain | ||
2 | G | gate | ||
3 | S | source |
型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
---|---|---|---|---|---|
BLF640 | BLF640U | Always Pb-free | NA | NA |
档案名称 | 标题 | 类型 | 格式 | 日期 |
---|---|---|---|---|
BLF640 (中文) | Broadband power LDMOS transistor | Data sheet | 2013-04-11 | |
AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
RFPower_Longevity_Overview | RF Power Longevity Overview | Other type | 2014-09-09 | |
SOT538A_112 | CDIP2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-12-03 | |
sot538a_po | ceramic surface mounted package; 2 leads | Outline drawing | 2013-02-14 |
型号 | 订购码 (12NC) | 可订购的器件编号 |
---|---|---|
BLF640 | 9340 674 71112 | BLF640U |