BLF640:宽带功率LDMOS晶体管

10 W LDMOS功率晶体管,用于HF至2200 MHz波率范围的应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 没有适用于宽带操作的内部匹配
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 适用于HF至2200 MHz频率范围内应用的RF功率放大器
    • 广播驱动器
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range102200MHz
PL(1dB)nominal output power at 1 dB gain compression10W
Gppower gainPL(AV) = 2 W; VDS = 28 V17.319.3dB
ηDdrain efficiencyPL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA2931%
ACPRadjacent channel power ratioPL(AV) = 2 W; VDS = 28 V; 2110 MHz < f < 2170 MHz; IDq = 100 mA-39-36dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF640
CDIP2
(SOT538A)
sot538a_poBulk Pack量产Standard MarkingBLF640U( 9340 674 71112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF640BLF640UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF640 (中文)Broadband power LDMOS transistorData sheetpdf2013-04-11
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
SOT538A_112CDIP2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot538a_poceramic surface mounted package; 2 leadsOutline drawingpdf2013-02-14
订购信息
型号订购码 (12NC)可订购的器件编号
BLF6409340 674 71112BLF640U
Broadband power LDMOS transistor BLF640
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
CDIP2; blister pack; standard product orientation 12NC ending 112 BLF6G21-10G
ceramic surface mounted package; 2 leads BLF6G21-10G