BLF647P：宽带功率LDMOS晶体管
200 W LDMOS RF功率晶体管，适用于广播发射器和工业应用。此晶体管适合HF至1500 MHz的频率范围。该器件凭借其出色的耐用性和宽带性能而非常适合数字应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 1500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 200 | W | |||
| Gp | power gain | VDS = 32 V | 18 | dB | ||
| ηD | drain efficiency | VDS = 32 V; f = 1300 MHz; IDq = 0.1 A | 70 | % | ||
| PL(M) | peak output power | 200 | W |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF647P |  CDFM4 (SOT1121A) | sot1121a_po | Bulk Pack | 量产 | Standard Marking | BLF647P,112( 9340 668 56112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D1 | drain1 |  |  |
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF647P | BLF647P,112 |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF647P (中文) | Broadband power LDMOS transistor | Data sheet | 2013-04-12 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLF647P_Data-sheet | PCB Design BLF647P (Data sheet) | Design support | zip | 2013-09-20 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| RFPower_Longevity_Overview | RF Power Longevity Overview | Other type | 2014-09-09 | |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| BLF647P_ADS-2009_Model | BLF647P ADS-2009 Model | Simulation model | zip | 2013-06-20 |
| BLF647P_ADS-2012_Model | BLF647P ADS-2012 Model | Simulation model | zip | 2014-05-02 |
| sot1121a_po | flanged LDMOST ceramic package; 2 mounting holes; 4 leads | Outline drawing | 2010-04-06 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF647P | 9340 668 56112 | BLF647P,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
| BLF647P ADS-2009 Model | Simulation model | 2013-06-20 |
| BLF647P ADS-2012 Model | Simulation model | 2014-05-02 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF647P (Data sheet) | Design support | 2013-09-20 |
- Broadband power LDMOS transistor BLF647P
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- RF Power Longevity Overview gan_devices
- flanged LDMOST ceramic package; 2 mounting holes; 4 leads BLF884P_S
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- BLF647P ADS-2009 Model BLF647PS
- BLF647P ADS-2012 Model BLF647PS
- PCB Design BLF647P (Data sheet) BLF647P
