BLF988(S):功率LDMOS晶体管

600W LDMOS RF功率晶体管,适合发射器应用和工业应用。该器件凭借其出色的耐用性而非常适合数字和模拟发射器应用。

特性和优势
    • 极佳的强度(所有相位的VSWR ≥ 40 : 1)
    • 最佳热性能和可靠性,Rth(j-c) = 0.15 K/W
    • 高功率增益
    • 高效率
    • 设计用于宽带操作(400 MHz至1000 MHz)
    • 内部输入匹配,可实现高增益和最佳宽带操作
    • 极佳的可靠性
    • 方便的功率控制
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 通信发射器应用
    • 工业应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF988SOT539A5001000600505819.8Pulsed RF; Pulsed RFProduction
BLF988SSOT539B5001000600505819.8Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF988

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLF988,112( 9340 662 86112 )
BLF988S

(SOT539B)
sot539b_poBulk Pack量产Standard MarkingBLF988S,112( 9340 662 87112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF988BLF988,112Always Pb-freeNANA
BLF988SBLF988S,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF988_BLF988S (中文)Power LDMOS transistorData sheetpdf2013-08-01
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF988_BLF988S_Data-sheetPCB Design BLF988(S) (Data sheet)Design supportzip2013-05-17
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF988_MWO_ModelBLF988 MWO ModelSimulation modelzip2013-11-21
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF9889340 662 86112BLF988,112
BLF988S9340 662 87112BLF988S,112
模型
标题类型日期
BLF988 MWO ModelSimulation model2013-11-21
其它
标题类型日期
PCB Design BLF988(S) (Data sheet)Design support2013-05-17
Power LDMOS transistor BLF988_S
Power LDMOS transistor BLF988_S
Power LDMOS transistor BLF988_S
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLF988 MWO Model BLF988_S
PCB Design BLF988(S) (Data sheet) BLF988_S