BLP05H6110XR：Power LDMOS transistor
A 110 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 600 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 110 | W | |||
| Gp | power gain | PL = 110 W; VDS = 50 V [0] | 27 | dB | ||
| ηD | drain efficiency | PL = 110 W [0] | 75 | % |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP05H6110XR |  HSOP4F (SOT1223-2) | sot1223-2_po | Reel 13" Q1/T1 in Drypack | 可提供样品 | Standard Marking | BLP05H6110XRY( 9340 693 43518 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | G2 | gate 2 |  |  |
| 2 | G1 | gate1 | ||
| 3 | D1 | drain1 | ||
| 4 | D2 | drain2 | ||
| 5 | S | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLP05H6110XR | BLP05H6110XRY |   | 3 | 3 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLP05H6110XR (中文) | Power LDMOS transistor | Data sheet | 2015-05-18 | |
| AN11183 | Mounting and soldering of RF transistors in over-molded plastic packages | Application note | 2012-11-06 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| sot1223-2_po | plastic, heatsink small outline package; 4 leads(flat) | Outline drawing | 2015-01-16 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLP05H6110XR | 9340 693 43518 | BLP05H6110XRY |
- Power LDMOS transistor BLP05H6110XR
