数据手册DataSheet 下载：BLP8G10S-45PG 功率LDMOS晶体管.pdf
BLP8G10S-45P和BLP8G10S-45PG是双路径45 W LDMOS功率晶体管，适合700 MHz 至1000 MHz频率的基站应用。
产品特点
| 产品应用
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订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLP8G10S-45PG | HSOP4 (SOT1224-1) | sot1224-1_po | Reel Dry Pack, SMD, 13" Q1/T1 | 激活 | Standard Marking | BLP8G10S-45PGY( 9340 673 72518 ) | |
| BLP8G10S-45PG | HSOP4 (SOT1224-1) | sot1224-1_po | Reel Pack, SMD, 13" Q1/T1 | 撤回替代产品 | Standard Marking | BLP8G10S-45PGJ( 9340 673 72118 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLP8G10S-45PG | BLP8G10S-45PGY |   | 3 | 3 | ||||
| BLP8G10S-45PG | BLP8G10S-45PGJ | | 3 | 3 |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLP8G10S-45P_8G10S-45PG (中文)：power LDMOS transistor | Data sheet | 2013-07-25 | |
| AN11183：Mounting and soldering of RF transistors in over-molded plastic packages | Application note | 2012-11-06 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| PCB_Design_BLP8G10S-45P_8G10S-45PG_Data-sheet：PCB Design BLP8G10S-45P(G) (Data sheet) | Design support | zip | 2013-07-30 |
| 75017301：Gen8: the next generation of LDMOS RF power for wireless infrastructures | Leaflet | 2012-06-11 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLP8G10S-45PG_ADS-2009_Model：BLP8G10S-45PG ADS-2009 Model | Simulation model | zip | 2013-08-06 |
| BLP8G10S-45PG_ADS-2012_Model：BLP8G10S-45PG ADS-2012 Model | Simulation model | zip | 2014-05-02 |
| sot1224-1_po：plastic, heatsink small outline package; 4 leads | Outline drawing | 2012-04-17 |
- power LDMOS transistor BLP8G10S_45P_G
- power LDMOS transistor BLP8G10S_45P_G
- power LDMOS transistor BLP8G10S_45P_G
- Mounting and soldering of RF transistors in over-molded plastic packages BLP8G21S-160PV
- Enabling the Mobile Experience rf
- PCB Design BLP8G10S-45P(G) (Data sheet) BLP8G10S_45P_G
- Gen8: the next generation of LDMOS RF power for wireless infrastructures BLP8G10S_45P_G
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLP8G10S-45PG ADS-2009 Model BLP8G10S_45P_G
- BLP8G10S-45PG ADS-2012 Model BLP8G10S_45P_G
- plastic, heatsink small outline package; 4 leads BLP8G10S_45P_G
