BLS6G2731(S)-120:LDMOS S波段雷达功率晶体管

120 W LDMOS功率晶体管,用于2.7 GHz至3.1 GHz范围雷达应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(2.7 GHz至3.1 GHz)
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 2.7 GHz至3.1 GHz频率范围内的雷达应用
    • S波段功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLS6G2731-120SOT502A27003100120324813.5Pulsed RF; Pulsed RFProduction
BLS6G2731S-120SOT502B27003100120324813.5Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS6G2731-120

(SOT502A)
sot502a_poBulk Pack量产Standard MarkingBLS6G2731-120,112( 9340 615 25112 )
BLS6G2731S-120

(SOT502B)
sot502b_poBulk Pack量产Standard MarkingBLS6G2731S-120,112( 9340 615 26112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS6G2731-120BLS6G2731-120,112Always Pb-free
BLS6G2731S-120BLS6G2731S-120,112Always Pb-free
文档资料
档案名称标题类型格式日期
BLS6G2731-120_6G2731S-120 (中文)LDMOS S-band radar power transistorData sheetpdf2008-11-14
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS6G2731-120_6G2731S-120_Data-sheetPCB Design BLS6G2731(S)-120 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
ldmos_transistors_in_power_microwave_applicationsLDMOS Transistors in Power Microwave ApplicationsOther typepdf2009-01-13
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLS6G2731-120_2700-3100MHz_NA-1103Application Measurement Report BLS6G2731-120 2700-3100 MHz NA-1103Reportpdf2015-06-23
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLS6G2731-1209340 615 25112BLS6G2731-120,112
BLS6G2731S-1209340 615 26112BLS6G2731S-120,112
其它
标题类型日期
PCB Design BLS6G2731(S)-120 (Data sheet)Design support2012-02-24
LDMOS S-band radar power transistor BLS6G2731_S_120
LDMOS S-band radar power transistor BLS6G2731_S_120
LDMOS S-band radar power transistor BLS6G2731_S_120
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
LDMOS Transistors in Power Microwave Applications BLS6G2731_S_120
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLS6G2731-120 2700-3100 MHz NA-1103 BLS6G2731_S_120
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
PCB Design BLS6G2731(S)-120 (Data sheet) BLS6G2731_S_120