BLS7G2730L(S)-200P：LDMOS S频段雷达功率晶体管

200 W LDMOS功率晶体管，适合2700 MHz至3000 MHz频率范围内的S频段雷达应用。

特性和优势
    • 高效率
    • 极佳的强度
    • 主要用于宽带操作
    • 极佳的热稳定性
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 内部匹配，便于使用
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • 2700 MHz至3000 MHz频率范围内的S频段雷达应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLS7G2730L-200PSOT539A27003000200324812Pulsed RF; Pulsed RFProduction
BLS7G2730LS-200PSOT539B27003000200324812Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS7G2730L-200P

(SOT539A)		sot539a_poBulk Pack量产Standard MarkingBLS7G2730L-200PU( 9340 676 07112 )
BLS7G2730LS-200P

(SOT539B)		sot539b_poBulk Pack量产Standard MarkingBLS7G2730LS-200PU( 9340 676 14112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS7G2730L-200PBLS7G2730L-200PUAlways Pb-freeNA
BLS7G2730LS-200PBLS7G2730LS-200PUAlways Pb-freeNA
文档资料
档案名称标题类型格式日期
BLS7G2730L-200P_LS-200P (中文)LDMOS S-band radar power transistorData sheetpdf2013-07-12
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS7G2730L-200P_LS-200P_Data-sheetPCB Design BLS7G2730L(S)-200P (Data sheet)Design supportzip2013-04-23
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLS7G2730-200P_ADS-2009_ModelBLS7G2730-200P ADS-2009 ModelSimulation modelzip2013-08-02
BLS7G2730-200P_ADS-2012_ModelBLS7G2730-200P ADS-2012 ModelSimulation modelzip2014-05-02
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLS7G2730L-200P9340 676 07112BLS7G2730L-200PU
BLS7G2730LS-200P9340 676 14112BLS7G2730LS-200PU
模型
标题类型日期
BLS7G2730-200P ADS-2009 ModelSimulation model2013-08-02
BLS7G2730-200P ADS-2012 ModelSimulation model2014-05-02
其它
标题类型日期
PCB Design BLS7G2730L(S)-200P (Data sheet)Design support2013-04-23
LDMOS S-band radar power transistor BLS7G2730L_S_200P
LDMOS S-band radar power transistor BLS7G2730L_S_200P
LDMOS S-band radar power transistor BLS7G2730L_S_200P
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLS7G2730-200P ADS-2009 Model BLS7G2730L_S_200P
BLS7G2730-200P ADS-2012 Model BLS7G2730L_S_200P
PCB Design BLS7G2730L(S)-200P (Data sheet) BLS7G2730L_S_200P
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