BLS7G3135L(S)-350P:LDMOS S波段雷达功率晶体管

350 W LDMOS功率晶体管,主要用于3.1 GHz至3.5 GHz范围的雷达应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(3.1 GHz至3.5 GHz)
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • S波段功率放大器
    • 3.1 GHz至3.5 GHz频率范围内的雷达应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLS7G3135L-350PSOT539A31003500350324312Pulsed RF; Pulsed RFProduction
BLS7G3135LS-350PSOT539B31003500350324312Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS7G3135L-350P

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLS7G3135L-350P,11( 9340 659 85112 )
BLS7G3135LS-350P

(SOT539B)
sot539b_poBulk Pack量产Standard MarkingBLS7G3135LS-350P,1( 9340 659 86112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS7G3135L-350PBLS7G3135L-350P,11Always Pb-freeNANA
BLS7G3135LS-350PBLS7G3135LS-350P,1Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS7G3135L-350P_7G3135LS-350P (中文)LDMOS S-Band radar power transistorData sheetpdf2013-10-29
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
Application_Measurement_Report_BLS7G3135L-350P_3100-3500MHz_NA-1716Application Measurement Report BLS7G3135L-350P 3100-3500 MHz NA-1716Reportpdf2015-06-23
BLS7G3135-350P_ADS-2009_ModelBLS7G3135-350PADS-2009 ModelSimulation modelzip2013-08-02
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLS7G3135L-350P9340 659 85112BLS7G3135L-350P,11
BLS7G3135LS-350P9340 659 86112BLS7G3135LS-350P,1
模型
标题类型日期
BLS7G3135-350PADS-2009 ModelSimulation model2013-08-02
LDMOS S-Band radar power transistor BLS7G3135L_S_350P
LDMOS S-Band radar power transistor BLS7G3135L_S_350P
LDMOS S-Band radar power transistor BLS7G3135L_S_350P
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
Application Measurement Report BLS7G3135L-350P 3100-3500 MHz NA-1716 BLS7G3135L_S_350P
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLS7G3135-350PADS-2009 Model BLS7G3135L_S_350P