BTA330Y-800BT:3Q Hi-Com Triac

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

特性和优势
    • 3Q technology for improved noise immunity
    • High commutation capability with maximum false trigger immunity
    • High junction operating temperature capability (Tj(max) = 150 °C)
    • High voltage capability
    • High current capability
    • Less sensitive gate for highest noise immunity
    • Internally insulated package
    • Internally isolated mounting base
    • Triggering in three quadrants only
    • Very high immunity to false turn-on by dv/dt and IEC 61000-4-4 fast transient
    • Package is RoHS compliant
    • Package meets UL94V0 flammability requirement
    • Package meets UL1557 isolation test requirement rated at 2500V RMS
应用
    • Heating controls
    • High power motor control
    • High power switching
    • Applications subject to high temperature (Tj(max) = 150 °C)
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VDRMrepetitive peak off-state voltage800V
IT(RMS)RMS on-state currentfull sine wave; Tmb ≤ 86 °C30A
ITSMnon-repetitive peak on-state currentfull sine wave; Tj(init) = 25 °C; tp = 20 ms270A
ITSMnon-repetitive peak on-state currentfull sine wave; Tj(init) = 25 °C; tp = 16.7 ms297A
Tjjunction temperature150°C
IGTgate trigger currentVD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C50mA
IGTgate trigger currentVD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C50mA
IGTgate trigger currentVD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C50mA
IHholding currentVD = 12 V; Tj = 25 °C75mA
VTon-state voltageIT = 42 A; Tj = 25 °C1.21.55V
dVD/dtrate of rise of off-state voltageVDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit4000V/µs
dVD/dtrate of rise of off-state voltageVDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit2000V/µs
dIcom/dtrate of change of commutating currentVD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit20A/ms
dIcom/dtrate of change of commutating currentVD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit15A/ms
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BTA330Y-800BT
TO-220AB
(SOT78D)
sot078d_poHorizontal, Rail Pack量产Standard MarkingBTA330Y-800BTQ( 9340 696 28127 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1T1main terminal 1
2T2main terminal 2
3Ggate
mbn.c.mounting base; isolated
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BTA330Y-800BTBTA330Y-800BTQNANA
文档资料
档案名称标题类型格式日期
sot078d_poplastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220Outline drawingpdf2007-07-09
订购信息
型号订购码 (12NC)可订购的器件编号
BTA330Y-800BT9340 696 28127BTA330Y-800BTQ
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 BT138Y-800E