BUK9518-55A：N沟道TrenchMOS逻辑电平FET

逻辑电平N沟道增强型场效应晶体管(FET)，采用塑料封装，使用TrenchMOS技术。该产品设计符合相应AEC标准，适用于汽车电子关键型应用。

特性和优势
    • 符合AEC Q101标准
    • 低导通电阻，因而导通损耗很小
    • 适用于逻辑电平栅极驱动源
    • 额定温度为175 °C，适用于对热性能要求苛刻的环境
应用
    • 12 V和24 V负载
    • 汽车和通用电源开关
    • 马达、灯具和螺线管
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C55V
IDdrain currentVGS = 5 V; Tmb = 25 °C61A
Ptottotal power dissipationTmb = 25 °C136W
RDSondrain-source on-state resistanceVGS = 10 V; ID = 25 A; Tj = 25 °C1216mΩ
RDSondrain-source on-state resistanceVGS = 4.5 V; ID = 25 A; Tj = 25 °C19mΩ
RDSondrain-source on-state resistanceVGS = 5 V; ID = 25 A; Tj = 25 °C1418mΩ
QGDgate-drain chargeVGS = 5 V; ID = 25 A; VDS = 44 V; Tj = 25 °C14nC
EDS(AL)Snon-repetitive drain-source avalanche energyID = 61 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped127mJ
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BUK9518-55A
TO-220AB
(SOT78A)		sot078a_poHorizontal, Rail Pack量产BUK9518-55ABUK9518-55A,127( 9340 568 11127 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ggate
2Ddrain
3Ssource
mbDmounting base; connected to drain
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BUK9518-55ABUK9518-55A,127week 1, 2005NANA
文档资料
档案名称标题类型格式日期
BUK9518-55A (中文)N-channel TrenchMOS logic level FETData sheetpdf2011-02-18
AN10273Power MOSFET single-shot and repetitive avalanche ruggedness ratingApplication notepdf2010-03-17
AN10874LFPAK MOSFET thermal design guideApplication notepdf2011-01-27
AN10874_ZHLFPAK MOSFET thermal design guide, Chinese versionApplication notepdf2012-09-14
AN11113LFPAK MOSFET thermal design guide - Part 2Application notepdf2011-11-16
AN11158Understanding power MOSFET data sheet parametersApplication notepdf2014-02-04
AN11160Designing RC SnubbersApplication notepdf2012-10-01
AN11156Using Power MOSFET Zth CurvesApplication notepdf2012-10-10
AN11243Failure signature of Electrical Overstress on Power MOSFETsApplication notepdf2012-10-29
AN11158_ZHUnderstanding power MOSFET data sheet parametersApplication notepdf2013-11-08
AN11261Using RC Thermal ModelsApplication notepdf2014-05-19
AN11113_ZHLFPAK MOSFET thermal design guide - Part 2Application notepdf2014-05-22
AN11599Using power MOSFETs in parallelApplication notepdf2015-07-07
75017631Discretes Semiconductors Selection Guide 2015Selection guidepdf2015-01-09
75017643Automotive MOSFET Selection Guide 2015: Performance, Quality, ReliabilitySelection guidepdf2015-03-23
75017651车用 MOSFET 选型指南2015版 (chinese version)Selection guidepdf2015-04-17
sot078a_poplastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABOutline drawingpdf2005-03-13
订购信息
型号订购码 (12NC)可订购的器件编号
BUK9518-55A9340 568 11127BUK9518-55A,127
N-channel TrenchMOS® logic level FET buk9518-55a
Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7M12-60E
Designing RC Snubbers BUK7M12-60E
Using Power MOSFET Zth Curves BUK7M12-60E
Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
Understanding power MOSFET data sheet parameters BUK7K6R8-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using power MOSFETs in parallel BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability BUK7M12-60E
车用 MOSFET 选型指南2015版 (chinese version) BUK7E8R3-40E
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB BUK9575-55A
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