CLF1G0035(S)-100P：宽带RF功率GaN HEMT _ BDTIC 中国领先电子元器件代理商

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CLF1G0035(S)-100P：宽带RF功率GaN HEMT

CLF1G0035-100P和CLF1G0035S-100P是100W通用宽带GaN HEMT，使用范围为DC至3.5 GHz。

特性和优势

工作频率为DC至3.5 GHz
100 W通用宽带RF功率GaN HEMT
极佳的强度(VSWR 10 : 1)
高电压操作(50 V)
热增强封装

应用

商业无线基础设施（蜂窝、WiMAX）
雷达
宽带通用放大器
公共移动无线电
工业、科学、医疗
干扰器
EMC测试
国防应用

关键参数

型号	Package version	f_range [min] (MHz)	f_range [max] (MHz)	P_L(1dB) (W)	V_DS (V)	η (%)	G_P (dB)	Test signal	Product status
CLF1G0035-100P	SOT1228A	0	3500	100	50	50.1	12.7	Pulsed RF; Pulsed RF	Development
CLF1G0035S-100P	SOT1228B	0	3500	100	50	50.1	12.7	Pulsed RF; Pulsed RF	Development

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
CLF1G0035-100P	CDFM4 (SOT1228A)	sot1228a_po		Bulk Pack	开发中	Standard Marking	CLF1G0035-100PU( 9340 675 21112 )
CLF1G0035S-100P	CDFM4 (SOT1228B)	sot1228b_po		Bulk Pack	开发中	Standard Marking	CLF1G0035S-100PU( 9340 675 22112 )

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
CLF1G0035-100P	CLF1G0035-100PU		Always Pb-free	NA	NA
CLF1G0035S-100P	CLF1G0035S-100PU		Always Pb-free	NA	NA

文档资料

档案名称	标题	类型	格式	日期
CLF1G0035-100P_1G0035S-100P (中文)	Broadband RF power GaN HEMT	Data sheet	pdf	2013-06-20
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
Application_Measurement_Report_CLF1G0035-100P_3100-3500MHz_NA-1918	Application Measurement Report CLF1G0035-100P 3100-3500 MHz NA-1918	Report	pdf	2015-06-23
NXP_RFpower_Lib_V09p0	RF Power Model Library for Microwave Office®	Simulation model	zip	2014-11-11
NXP_RFpower_Manual_MWO_20141111	RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	pdf	2014-11-11
NXP_RFPower_Simulation_Example	RF Power Simulation Example for Microwave Office®	Simulation model	zip	2012-06-11
CLF1G0035-100P_ADS-2009_Model	CLF1G0035-100P ADS-2009 Model	Simulation model	zip	2013-03-04
CLF1G0035-100P_ADS-2011_Model	CLF1G0035-100P ADS-2011 Model	Simulation model	zip	2013-03-04
NXP_CLF1G0035_100P_Spar_Vgs_2n17_Vd_50V_Idq_340mA_10Mto8GHz	CLF1G0035-100P 50V 340mA S-parameter Data	S-parameter	s2p	2012-06-18
sot1228b_po	earless flanged LDMOST ceramic package; 4 leads	Outline drawing	pdf	2013-05-16
sot1228a_po	flanged LDMOST ceramic package; 2 mounting holes; 4 leads	Outline drawing	pdf	2013-05-16

订购信息

型号	订购码 (12NC)	可订购的器件编号
CLF1G0035-100P	9340 675 21112	CLF1G0035-100PU
CLF1G0035S-100P	9340 675 22112	CLF1G0035S-100PU

模型

标题	类型	日期
RF Power Model Library for Microwave Office®	Simulation model	2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®	Simulation model	2014-11-11
RF Power Simulation Example for Microwave Office®	Simulation model	2012-06-11
CLF1G0035-100P ADS-2009 Model	Simulation model	2013-03-04
CLF1G0035-100P ADS-2011 Model	Simulation model	2013-03-04
CLF1G0035-100P 50V 340mA S-parameter Data	S-parameter	2012-06-18

Broadband RF power GaN HEMT CLF1G0035_S_100P

Broadband RF power GaN HEMT CLF1G0035_S_100P

Broadband RF power GaN HEMT CLF1G0035_S_100P

Fatigue in aluminum bond wires gan_devices

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

Application Measurement Report CLF1G0035-100P 3100-3500 MHz NA-1918 CLF1G0035_S_100P

earless flanged LDMOST ceramic package; 4 leads CLF1G0035_S_100P

flanged LDMOST ceramic package; 2 mounting holes; 4 leads CLF1G0035_S_100P

RF Power Model Library for Microwave Office® CLF1G0060_S_30

RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30

RF Power Simulation Example for Microwave Office® CLF1G0060_S_30

CLF1G0035-100P ADS-2009 Model CLF1G0035_S_100P

CLF1G0035-100P ADS-2011 Model CLF1G0035_S_100P

CLF1G0035-100P 50V 340mA S-parameter Data CLF1G0035_S_100P

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